SBP13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
Total Dissipation at Ta*=25℃
T
J
T
STG
Operation Junction Temperature
Storage Temperature
2.2
-40~150
-40~150
℃
℃
Parameter
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc*=25℃
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
12
25
6.0
Units
V
V
V
A
A
A
A
W
t
P
=5ms
12
100
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
℃/W
℃/W
Rev.A Aug.2010
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