SBW13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage,High speed
switching characteristics required such as
system,switching mode power supply.
lighting
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector -emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
12
25
6.0
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
12
120
-40~150
-40~150
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.04
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
