Electrical Characteristics (TC=25℃ unless otherwise noted)
Value
Units
Min Typ Max
Symbol
Parameter
Test Conditions
-
-
-
-
5
1
μA
Repetitive Peak Off-State Current
Peak On-State Voltage (1)
VAK=VDRM RGK=1KΩ
IDRM
VTM
mA
-
-
1.8
V
ITM=8A, tp=380㎲
Gate Trigger Current (2)
Gate Trigger Voltage (2)
20
-
-
-
50
μA
V
IGT
VD=12V,RL=140
0.8
VGT
Non-Trigger Gate Voltage (1)
0.1
V
VGD
VD=12V,RL=3.3KΩ, RGK=1 KΩ
VD=67%VDRM, RGK=1 KΩ
IT=50mA, RGK=1 KΩ
Critical Rate of Rise Off-State Voltage
15
-
-
-
-
-
5
-
dv/dt
IH
V/㎲
mA
mA
Holding Current
Latching Current
IT=1mA, RGK=1 KΩ
6
IL
Tj=125°C
Dynamic resistance
-
-
100
Rd
mΩ
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
