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SDP08S60 参数 Datasheet PDF下载

SDP08S60图片预览
型号: SDP08S60
PDF下载: 下载PDF文件 查看货源
内容描述: 8A , 600V超快二极管单 [8A,600V Ultrafast Single Diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 372 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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SDP08S60
8A,600V Ultrafast Single Diode
Features
■ Ultrafast recovery time t
rr
<17ns
■ Low forward voltage drop
■ Low leakage current
■ High reliability by planer design
■ Maximum Junction Temperature Range(150℃)
C
General Description
Winsemi’s SDP series are the state of the are Ultra fast recovery
rectifiers specifically designed with optimized performance of
forward voltage drop and ultra fast recovery time. The planar
structure and the platinum doped life time control, guarantee the
best overall performance, ruggedness and reliability characteristics.
C
A
TO220
C
Applications
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
C
A
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FM
I
FSM
P
D
T
STG
,T
J
Torque
Average Forward Current
Parameter
Peak Repetitive Reverse Voltage
Square wave, duty=1/2,Tc=115℃
Square wave, 20kHz,Tc=115℃
Repetitive Peak Forward Current
No-Repetitive Peak Surge Current
Power Dissipation
Operating Junction Temperature & Storage Temperature
Module-to-Sink , Recommended(M3)
Value
600
8
16
110
50
-40 to 150
1.1
Units
V
A
A
A
W
N.m
Electrical Characteristics
(T
C
=25
Symbol
V
F
unless otherwise noted)
Parameter
I
F
=8A
Forward Voltage Drop
I
F
=16A
Test Conditions
Min
-
-
-
-
-
-
-
Value
Typ
Max
1.4
1.7
-
-
17
30
-
1.7
2.1
15
500
-
-
2.5
Units
V
V
µA
µA
ns
℃/W
V
R
=600V
I
RRM
Reverse Current
V
R
=600V,Tc=150℃
I
F
=1.0A,V
R
=30V,dI
F
/dt=50A/µs
t
rr
R
th(J-C)
Reverse Recovery Time
Thermal Resistance
I
F
=8.0A,V
R
=300V,
May,2008.Rev.A.
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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