SFF10N60
Silicon N-Channel MOSFET
Features
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10A,600V ,R
DS(on)
(Max0.75Ω)@V
GS
=10V
Ultra-low Gate Charge(34nC)
Fast Switching Capability
100%Avalanche Tested
Improved dv/dt capability
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies , power
factor correction ,UPS and a electronic lamp ballast base on half
bridge.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current (@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.4
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
6.0*
40*
±30
713
18
4.5
50
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current (@Tc=25℃)
Parameter
Value
600
10*
Units
V
A
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
2.5
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.