SFF2N60
Silicon N-Channel MOSFET
Features
■2A,600V, R
DS(on)
(Max 4.7Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance , have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Drain Source Voltage
Continuous Drain Current(@T
C
=25℃)
Continuous Drain Current(@T
C
=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Drain Current Pulsed
Gate to Source Voltage
SinglePulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
=25℃)
Derating Factor above25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
(Note1)
Parameter
Value
600
2.0*
1.5*
9.5*
±30
140
2.8
4.5
23
0.18
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
5.5
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
