SFF730
730
Silicon N-Channel MOSFET
Cha
OSF
Features
■5.5A,400V, R
DS(on)
(Max 1.0Ω)@V
=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Th i s Po w e r MOS F ET is pr o d uc e d usi n g Wi n se m i ’ s ad va n ce d
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugg ed ava lan ch e cha racteristics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
400
5.5*
2.9*
22*
±30
330
7.4
4
38
0.3
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Channel
Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
3.3
62
Units
℃/W
℃/W
Rev.A Dec.2010