SFP2N60
SFP2N60
Silicon N-Channel MOSFET
Features
�½
�½
�½
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2A,600V,R
DS(on)
(Max4.7Ω)@V
GS
=10V
Ultra-low Gate Charge(Typical 9.0nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest Technology has been
especially designed to minimize on-state resistance , have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current (@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
0.43
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
(Note2)
(Note1)
Note3)
(Note1)
1.3
8
±30
140
6.4
5.5
54
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current (@Tc=25℃)
Parameter
Value
600
2.0
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink
Thermal Resistance,Junction-to-Ambient
Value
Min
-
0.5
-
Typ
-
-
-
Max
2.3
-
62.5
units
℃/W
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
