SFP50N06
Silicon N-Channel MOSFET
Features
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�½
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R
DS(on)
(Max 22mΩ)@V
GS
=10V
Ultra-low Gate Charge(Typical 31nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's trench Layout
-based process .This technology mproves the performances
Compared with standard parts form various sources.All of these
power MOSFETs are designed for applications in switching
regulators , switching convertors, motor and relay drivers ,and
drivers
for high power bipolar switching transistors demanding
high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
1.3
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
38
200
± 25
480
13
5.8
130
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
60
50
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Case-to-Sink,Flat, Greased Surface
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
0.96
-
62.5
Units
℃/W
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
