SFP5N50
Silicon N-Channel MOSFET
Features
■ 5A,500V,RDS(on)(Max 1.6Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi ’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.55
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note
2)
(Note
1)
(Note 3)
(Note1)
2.9
18
±30
300
7.5
4.5
73
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
500
5
Units
V
A
Channel
Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Value
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Min
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
-
-
Typ
-
0.5
-
Max
1.7
-
62.5
℃/W
℃/W
℃/W
Units
1/7
.
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