SFP634
Silicon N-Channel MOSFET
Features
■ 9A, 250V, R
DS(on)
(Max 0.45Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 41nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Po w e r MOS F ET is pr o du ce d usi n g Wi n se m i ’ s adv an ce d
planar stripe, DM OS technology. This latest technology has been
especi al ly designed to minim ize on- state resistance, have a high
ru gg e d ava l an ch e ch a ra cte r ist ic s. Thi s devi ce s is sp e cia l l y we ll
s u i t e d fo r l o w v o l t a g e a p p l i c a t i o n s s u c h a s a u t o m o t i v e , h i g h
efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.64
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
5
72
±20
300
7.4
4.8
88
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
250
Units
V
A
9
Channel
Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
1.42
-
62.5
Units
℃/W
℃/W
℃/W
1/7
.
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
