SFU1N60
Silicon N-Channel MOSFET
Features
■1.3A,600V,
R
DS(on)
(Max 8.5Ω)@V
GS
=10V
■
Ultra-low Gate Charge(Typical 9.1nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
G
D
S
TO251
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note
2)
(Note
1)
(Note 3)
(Note1)
Parameter
Value
600
1.3
0.84
5.0
±30
78
3.9
5.5
32
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min
-
0.5
-
Value
Typ
-
-
-
Max
3.9
-
110
Units
℃/W
℃/W
℃/W
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P01-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
