STF12A60
Bi-Directional Triode Thyristor
Features
■
Repetitive Peak off-State Voltage:600
■R.M.S
On-State Current(I
T(RMS)
=12A
■
Isolation Voltage ( V
ISO
= 1500V AC )
■
High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
A1
A2
G
TO220F
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified)
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current,
(1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
(Note 1)
Value
600
12
119/130
71
5
0.5
2
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Note1:
.Although not recommended, off-state v
oltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
3.3
120
Units
℃/W
℃/W
Rev. B Nov.2008
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