STN1A60S
Logic Level
Bi-Directional Triode Thyristor
irecti
Trio
rist
sto
Features
eat
■
Repetitive Peak off-State Voltage: 600V
■
R.M.S On-State Current(I
T(RMS)
=1A
■
Low on-state voltage: V
TM
=1.2(typ.)@ I
TM
■
Low reverse and forward blocking current:
I
DRM
■
Low holding current: I
H
=4mA (typ.)
■
High Commutation dV/dt.
General Description
escri tio
rip
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(T
J
=25℃ unless otherwise specified)
imu
ing
Symbol
V
DRM
T
(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
dI/dt
I
FGM
V
RGM
T
J,
T
stg
Parameter
amet
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, T
L
=50℃)
Peak Forward Surge Current,
(full Cycle, Sine Wave, 50/60 Hz)
(Note 1)
Value
600
1
9.1/10
0.41
5
0.1
50
0.5
6
-40~125
-40~150
2
Units
V
A
A
A
2
s
W
W
A/μs
A
V
℃
℃
g
Circuit Fusing Considerations (tp= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
T
J
=125℃
I
TM
= 1.5A; I
G
= 200mA; dI
G
/dt = 200mA/µs
Peak Gate Current — Forward, Tj = 125°C
Peak Gate Voltage — Reverse, Tj = 125°C
Junction Temperature
Storage Temperature
mass
(20 µs, 120 PPS)
(20 µs, 120 PPS)
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
Note1:
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Parameter
amet
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
Typ
-
-
Max
Max
60
120
Units
℃/W
℃/W
Rev. B
Nov.2008
T01-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
