WBP13005D
High Voltage Fast -Switching NPN Power Transistor
Features
�½
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
Built-in free wheeling diode
General Description
This Device is designed for high Voltage, High speed
switching Characteristics required such as
system ,switching mode power supply.
lighting
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base peak Current
Total Dissipation
Operation Junction Temperature
Storage Temperature
Test conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
4
8
2
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
4
75
150
-55~150
Thermal characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
3.12
8.9
Units
℃/W
℃/W
Rev.A Aug.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
