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WBR13003D 参数 Datasheet PDF下载

WBR13003D图片预览
型号: WBR13003D
PDF下载: 下载PDF文件 查看货源
内容描述: 高压快速开关NPN功率晶体管 [High Voltage Fast-Switching NPN Power Transistor]
分类和应用: 晶体开关晶体管高压
文件页数/大小: 5 页 / 440 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WBR13003D
Electrical Characteristics (Tc = 25 C)
25°C)
Value
Min
700
400
-
-
-
-
-
10
9
-
-
-
-
-
-
-
-
-
1.6
1.2
10
20
20
40
-
Symbol
BV
CBO
BV
CEO
V
CE(sat)
V
BE(sat)
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter- Base Cutoff Current
DC Current Gain
Test Conditions
Ic=0.5mA,Ie=0
Ic=10mA,Ib=0
Ic=200mA,Ib=100mA
Ic=200mA,Ib=100mA
Vcb=550V,Ie=0mA
Vce=400V,Ib=0mA
Veb=9V,Ic=0mA
Vce=20V,Ic=20mA
Vce=5V, Ic=1mA
Units
Max
V
V
V
V
μA
μA
μA
Typ
ts
tf
Storage Time
Fall Time
V
CC
=250V
-
I
C
=5 IB
-
I
B1
=- I
B2
=0.04A
-
0.8
-
3
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
2/ 5
.
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved