WBR13003B3
BR13003B3
High Voltage Fast -Switching NPN Power Transistor
Features
■
Very High Switching Speed
■
High Voltage Capability
■
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage,
switching characteristics required such
electronic energy saving lamps, electronic
mobile phone chargers power Switch circuit,
component of such electronic products.
High speed
ascompact
ballast and
is the core
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector -Emitter Voltage
Collector -Emitter voltage
Emitter-Bade Voltage
Collector Current
Collector pulse Current
Total dissipation at Tc=25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
600
450
9.0
1.0
2.0
18
150
-40~150
Units
V
V
V
A
A
W
℃
℃
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
6.94
89
Units
℃/W
℃/W
Rev.A Mar.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
