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WCD6C60 参数 Datasheet PDF下载

WCD6C60图片预览
型号: WCD6C60
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [Silicon Controlled Rectifiers]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 405 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WCD6C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS
)= 6 A )
Low On-State Voltage (1.4V(Typ.) @ I
TM
)
Isolation Voltage(V
ISO
=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings
(
T
= 25°C unless otherwise specified)
J
Symbol
V
DRM
I
T(AV)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Condition
Ratings
600
Units
V
A
Tc =110 °C
Conduction Angle)
R.M.S On-State Current(180°
3.8
I
T(RMS)
Conduction Angle)
Tc =110 °C
1/2 Cycle, 60Hz, Sine
6
A
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
Surge On-State Current
WaveNon-Repetitive
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Tj=125 °C
Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
A,C.1minute
t =10ms
F=60Hz,Tj=125 °C
66
21
50
5
0.5
2
5.0
1500
-40~125 °C
-40~150 °C
A
A
2
s
A/㎲
W
W
A
V
V
°C
°C
I
FGM
V
RGM
V
ISO
T
J
T
STG
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Value
3.12
89
Units
℃/W
℃/W
Rev.A Oct.2010