WCD8C60S 参数 Datasheet PDF下载

WCD8C60S

Sensitive Gate

Silicon Controlled Rectifiers

Features

�½

�½

�½

Sensitive gate trigger current:I

GT

=200uA maximum

Low On-State Voltage :V

TM

=1.2(typ.) @ I

TM

)

Low reverse and forward blocking current:

I

DRM

/I

RRM

=2mA@TC=125℃

�½

Low holding current :I

H

=5mA maximum

General Description

Sensitive gate triggering SCR is suitable for the application where gate

current limited such as microcontrollers, logic integrated circuits,small

motor control, gate driver for large SCR,sensing and detecting

circuits.general purpose switching and phase control applications

Absolute Maximum Ratings

(

T

= 25°C unless otherwise specified)

J

Symbol

V

DRM

/V

RRM

I

T(AV)

I

T(RMS)

I

TSM

I

2

t

di/dt

Parameter

Repetitive Peak Off-State Voltage

Average On-State Current(180° Conduction Angle)

R.M.S On-State Current(180° Conduction Angle)

Non Repetitive Surge Peak on-state Current

tp=10ms

I

2

t Valuefor Fusing

Critical rate of rise of on-state current

T

J

=125 °C

I

TM

=2A;IG=10mA; dI

G

/dt=100A/µs

Average Gate Power Dissipation

Peak Gate Current

Reverse Peak Gate Voltage

Junction Temperature

Storage Temperature

T

J

=125 °C

T

J

=125 °C

T

J

=125 °C

tp=8.3ms

(Note(1)

T

I

=85 °C

T

I

=85 °C

tp=8.3ms

Value

600

5

8

73

Units

V

A

A

A

70

24.5

50

1

4

5

-40~125

-40~150

A

2

s

A/㎲

W

A

V

°C

°C

P

G(AV)

I

FGM

V

RGM

T

J

T

STG

Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may

switch to the on-stage.The rate of rise of current should not exceed15A/µs.

Thermal Characteristics

Symbol

R

θJc

R

θJA

Parameter

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

Value

Min

-

-

Typ

-

-

Max

20

70

Units

℃/W

℃/W

Rev.A Oct.2010

Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.