WCF8C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT
(RMS)
=8A)
Low On-State Voltage(1.4(Typ.)@ITM)
Isolation Voltage(V
ISO
=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings
(
T
= 25°C unless otherwise specified)
J
Symbol
V
DRM
/V
RRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
tp=10ms
I
2
t Valuefor Fusing
Critical rate of rise of on-state current
T
J
=125 °C
I
TM
=2A;IG=10mA; dI
G
/dt=100A/µs
Average Gate Power Dissipation
Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown voltage(R.M..S)
Junction Temperature
Storage Temperature
T
J
=125 °C
T
J
=125 °C
T
J
=125 °C
A,C.1minute
tp=8.3ms
(Note(1)
T
I
=85 °C
T
I
=85 °C
tp=8.3ms
Value
600
5
8
73
Units
V
A
A
A
70
24.5
50
1
4
5
1500
-40~125
-40~150
A
2
s
A/㎲
W
A
V
V
°C
°C
P
G(AV)
I
FGM
V
RGM
V
ISO
T
J
T
STG
Note1:
Note1:Although
not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
Min
-
-
Typ
-
-
Max
20
70
Units
℃/W
℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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