WCR4C60
Silicon Controlled Rectifiers
Features
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Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
Isolation Voltage(V
ISO
=1500V AC)
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings
(
T
= 25°C unless otherwise specified)
J
Symbol
V
DRM
I
T(AV)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
R.M.S On-State Current(180° Conduction
Condition
T
i
=60 °C
Tamb=25 °C
T
i
=60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Ratings
600
1.35
Units
V
A
0.9
4
A
1.35
33
A
A
2
s
A/㎲
W
W
A
V
°C
°C
I
T(RMS)
Angle)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
ISO
T
J
T
STG
Surge On-State Current
WaveNon-Repetitive
I
2
t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Isolation Breakdown voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
A,C.1minute
Tj=125 °C
t =10ms
F=60Hz,Tj=125 °C
4.5
50
0.5
0.2
1.2A
1500
-40~125 °C
-40~150 °C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Value
15
100
Units
℃/W
℃/W
Rev.A Oct.2010
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