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WFD1N60 参数 Datasheet PDF下载

WFD1N60图片预览
型号: WFD1N60
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOSFET [Silicon N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 582 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WFD1N60
FD1
Silicon N-Channel MOSFET
lic
Cha
OSF
Features
1.3A,600V,R
DS(on)
(Max 8.5Ω)@V
=10V
Ultra-low Gate Charge(Typical 9.1nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged
avalanche characteristics. This devices is specially well suited for high
efficiency switch mode power supply , electronic lamp ballasts based
on half bridge and UPS.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
0.24
-55~150
300
W/℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
0.84
5.0
±30
78
3.9
5.5
32
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
1.3
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min
-
0.5
-
Typ
-
-
-
Max
3.9
-
110
Units
℃/W
℃/W
℃/W
Rev.A Jun.2011