WFD4N60B
WFD4N60B
Silicon N-Channel MOSFET
Features
■ 4A,600V.R
DS(on)
(Max 2.4Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 16nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has
beenespecially designed to minimize on-state resistance,
have a high Rugged avalanche characteristics. This devices
is specially well Suited for half bridge and full bridge resonant
topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
, T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.78
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
2.5
16
±30
240
10
4.5
80
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
4
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Value
Min
-
Typ
-
Max
1.56
50
Units
℃/W
-
-
110
℃/W
*When mounted on the minimum pad size recommended(PCB Mount)
Rev.A Nov.2010