WFD5N50
5N50
Silicon N-Channel MOSFET
lic
Features
■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced usi ng Wins e mi ’s ad van ced
plana r stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugge d avalanche chara ct er istics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
DPAK
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
0.49
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
2.9
18
±30
300
7.5
4.5
61
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
P a ra m ete r
ter
Value
alue
500
5
U n i ts
V
A
Channel
Temperature
Thermal Characteristics
V al ue
alue
Symb ol
R
QJC
R
QCS
R
QJA
P a ra m et e r
ete
Min
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
-
-
Typ
-
0.5
-
M ax
2.05
-
62.5
℃/W
℃/W
℃/W
U nits
nit
Rev.A Oct.2010
.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
