WFD830
WFD
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge (gate−source
Qg
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Qgs
Qgd
V
GS
= 10 V,
nC
I
D
=4.5 A
(Note4,5)
-
-
3.7
15
-
-
tf
toff
V
DD
= 400 V,
-
32
44
R
G
=25Ω
(Note4,5)
-
-
85
45
180
100
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
ΔBV
DSS
/
ΔTJ
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
Test Condition
V
GS
=
±30
V, V
DS
= 0 V
I
G
=
±10
μA, V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 250 μA, V
GS
= 0 V
I
D
=250μA,
25℃
V
DS
= 10 V, I
D
=250 μA
V
GS
= 10 V, I
D
= 2.25A
V
DS
= 40 V, I
D
= 2.25A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
=250 V,
I
D
=4.5A
Referenced
to
Min
-
±30
-
500
-
2
-
-
-
-
-
-
-
Type
-
-
-
-
0.55
-
1.16
4.2
800
18
76
15
40
Max
±100
-
1
-
-
4
1.5
-
1050
23
100
40
90
Unit
nA
V
μA
V
V/℃
V
Ω
S
pF
ns
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
-
-
I
DR
= 4.5 A, V
GS
= 0 V
I
DR
= 4.5 A, V
GS
= 0 V,
dI
DR
/ dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
-
305
2.6
Max
4.5
18
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,I
AS
=4.5A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
3.I
SD
≤4.5A,di/dt≤300A/us, V
DD
<BV
DSS
,STARTING T
J
=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
