WFF12N60
WFF12N6
N60
Silicon N-Channel MOSFET
Silico N-Ch
MOSF
Features
■
12A, 600V,R
DS(on)
(Max 0.65Ω)@V
=10V
■
Ultra-low Gate Charge(Typical 39nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Isolation Voltage ( V
ISO
= 4000V AC )
■
Maximum Junction Temperature Range(150℃)
General Description
Descr
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
G
D
S
TO220F
Absolute Maximum Ratings
Abso
Maxi
Ratin
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current(@Tc=25
℃
)
Continuous Drain Current(@Tc=100
℃
)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
2)
Repetitive Avalanche Energy
1)
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25
℃
)
Derating Factor above 25
℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note1)
(Note
(Note
(Note 3)
Parameter
Value
600
12*
7.6*
48*
±30
880
25
4.5
51
0.41
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
℃
℃
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
The
Charact eristi
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
2.45
-
62.5
Units
℃/W
℃/W
℃/W
Rev. C Nov.2008
T03-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
