WFF15N60
Silicon N-Channel MOSFET
Features
½
½
½
½
½
15A,600V, R
DS(on)
(Max0.52Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 36nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
high efficiency switch model power supplies, power factor correction
and half bridge and full bridge resonant topology line a electronic
lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.42
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
9.5*
60*
±30
245
23.9
9.8
53
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
15*
Units
V
A
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
2.36
62.5
Units
℃/W
℃/W
Rev.A Oct.2010