WFF4N60
Silicon N-Channel MOSFET
Features
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4A,600V,R
DS(on)
(Max 2.5Ω)@V
GS
=10V
Ultra-low Gate Charge(Typical 16nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(V
ISO
=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.26
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
2.5*
16*
±30
240
10
4.5
33
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
4*
Units
V
A
*
Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
3.79
62.5
Units
℃/W
℃/W
Rev.A Sep.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
