WFF840
Silicon N-Channel MOSFET
Silico N-Ch nnel MOSF
Features
■
8A,500V,R
DS(on)
=10V
■
Ultra-low Gate Charge(Typical 48nC)
■Fast
Switching Capability
■
100%Avalanche Tested
■
Isolation Voltage ( V
ISO
= 4000V AC )
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planarstripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction bridge and full bridge resonant topology line a and half
electronic lamp ballast.
G
D
S
TO220F
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J,
T
stg
T
L
Drain Source Voltage
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note 2)
(Note 1)
(Note 3)
(Note1)
Parameter
Value
500
8*
5.1*
32*
±30
320
13.4
3.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
*
Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
2.84
-
62
Units
℃/W
℃/W
℃/W
Rev. C Nov.2008
T03-1
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
