WFF8N65B
WFF8N65B
Silicon N-Channel MOSFET
Features
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7.5A,650V,R
DS(on)
(Max1.3Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 25nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage (V
ISO
=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.38
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
4.3*
30*
±30
590
14
4.5
48
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
650
7.5*
Units
V
A
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
2.6
62.5
Units
℃/W
℃/W
Rev.A Nov.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
