WFN1N60
Silicon N-Channel MOSFET
Features
�½
�½
�½
�½
�½
1.3A,600V, R
DS(on)
(Max8.5Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 9.1nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is produced using Winse mi’s advan
ced planar stripe, VDMOS technology. This latest technology
has
been
especially
designed
to
minimize
on-state
resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch
mode power supply. electronic Lamp ballasts based on half
bridge and UPS.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.05
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
0.84
5.0
±30
78
3.9
5.5
5
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
1.3
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
25
120
Units
℃/W
℃/W
Rev.A Aug.2011