WFP12N65
WFP N65
Silicon N-Channel MOSFET
Features
■ 12A,650V,R
DS
(on)(Max0.8Ω)@V
GS
=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC-DCswitching power supplies, DC-DCpower converters,
high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J,
T
stg
T
L
Junction and Storage Temperature
1.43
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
(Note 2)
(Note 1)
(Note 3)
(Note1)
±30
990
22
4.5
178
A
A
V
mJ
mJ
V/ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
650
12
Units
V
A
Channel
Temperature
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
-
Typ
-
-
-
Max
0.70
-
62.5
Units
℃/W
℃/W
℃/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
