WFP3205
Silicon N-Channel MOSFET
Features
■
110A,50V, R
DS(on)
(Max 8mΩ)@V
GS
=10V
■
Ultra-low Gate charge(Typical133nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe,DMOS technology. This latest technology has
beenespecially designed to minimize on-state resistance ,have
a lowgate charge with superior switching performance ,and
ruggedavalanche characteristics.This Power MOSFET is well
suited for synchronous DC-DC Converters and power
Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
1.3
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note1)
(Note3)
(Note1)
80
390
±20
20
5.0
200
A
A
V
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
50
110
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
0.75
-
62
Units
℃/W
℃/W
℃/W
Rev.A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
