WFP70N06
Silicon N-Channel MOSFET
lic
Cha
OSF
Features
■
70A,60V, RDS(on)(Max0.014Ω)@VGS=10V
■
Ultra-low Gate charge(Typical 70nC)
■
Low Crss (Typical 160pF)
■
Improved dv/dt capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Semiwell's advanced planar
stripe,DMOS technology.This latest technology has been especially
designed to minimize on-state resistance, have a low gate charge
with superior switching performance, and rugged avalanche
characteristics,DC-DC Converters and
portableand,battery operatedproducts.
power
management
in
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
1/8 form Case for 5 seconds
Junction and Storage Temperature
Maximum Lead Temperature for soldering purpose,
300
1.05
-55~175
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note3)
(Note1)
51
280
±25
800
7.0
158
A
A
V
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
60
70
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QCS
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
-
Typ
-
0.5
-
Max
0.95
-
62.5
Units
℃/W
℃/W
℃/W
Rev.A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
