WFSA5510
N-Channel Electrical Characteristics
at Ta=250C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
DS(ON)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
Conditions
I
D
=250uA, V
GS
=0V
V
DS
=80V, V
GS
=0V
V
GS
=+16V, V
DS
=0V
V
DS
= V
GS
, I
D
=250uA
I
D
=2A, V
GS
=10V
I
D
=1.5A, V
GS
=4V
V
DS
=30V,
V
GS
=0V,
f=1MHz
V
GEN
=10V,
V
DS
=30V,
R
L
=30Ω, I
D
=1A,
R
GEN
=6Ω
N-Channel
V
DS
=50V, V
GS
=10V,
I
D
=2A
I
S
=2.5A, V
GS
=0V
Ratings
min
100
-
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
typ
-
-
-
1.8
175
220
470
40
25
6
8
25
20
12
1.8
1
0.75
max
-
1
+10
2.6
220
310
-
-
-
12
15
46
37
17
-
-
1.3
Unit
V
uA
nA
V
mΩ
mΩ
pF
nS
nC
V
2/10
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
