WFW9N90W
Silicon N-Channel MOSFET
Features
■
9A,900V, R
DS(on)
(Max1.35Ω)@V
GS
=10V
■
Ultra-low Gate charge(Typical 58nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect
transistors are produced using Winsemi's proprietary, planar
stripe ,DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
Derating Factor above 25℃
T
J
,T
stg
T
L
Junction and Storage Temperature
Channel Temperature
0.54
-55~150
300
W/℃
℃
℃
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
(Note2)
(Note1)
(Note3)
(Note1)
5.7
27
±30
663
15
4.5
68
A
A
V
mJ
mJ
V/ ns
W
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
900
9
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
1.85
62.5
Units
℃/W
℃/W
Rev.A Oct.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
