WFW9N90
Silicon N-Channel MOSFET
Features
■
9A,900V,R
DS(on)
(Max1.35Ω)@V
=10V
■
Ultra-low Gate charge(Typical 58nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide
performance, and
withstand
high
superior
pulse
switching
in
the
energy
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J
,T
stg
T
L
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
(Note1)
5.7
27
±30
663
15
4.5
150
-55~150
300
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
900
9
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
0.83
50
Units
℃/W
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
