WFY5N03
WFY5N03
30V N−Channel MOSFET
Features
■ 5.8A, 30V, R
DS(on)
(Max 33mΩ)@V
=-4.5V
■ 1.4V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
■ Halogen-free
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load switching and PA switching.
D
G
S
SOT-23
SOT
Absolute Maximum Ratings
(
Tc=25℃ unless otherwise noted)
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
ESD
T
J,
T
stg
T
L
Drain Source Voltage
Continuous Drain Current
Drain Current Pulsed
Total Power Dissipation(Note 1)
Tc=75℃
Gate to Source Voltage
ESD Capability (Note 3)
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
C=100pF,R
S
= 1500Ω
0.3
±8
225
-55~150
260
V
V
℃
℃
Parameter
Value
30
5.8
30
0.25
Units
V
A
A
W
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
R
QJA
R
QJA
R
QJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
-
Typ
-
Max
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Jun.2011
P03-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
