WFY5P03
WFY5
-30V P−Channel MOSFET
Features
■ -4.3A, -30V, R
DS(on)
(Max 58mΩ)@V
=-4.5V
■ -2.5V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s
advanced MOS technology. This latest technology has
been especially designed to minimize on-state resistance,
have a high rugged avalanche characteristics. This devices is
specially well suited for Load/Power
Management
for
Portables
and
Computing, Charging Circuits and Battery
Protection
Absolute Maximum Ratings
(
Tc=25℃ unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
P
T
T
ch
T
stg
Drain Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Drain Current Pulsed
PW≤10us,duty cycle≤1%
Mounted on a ceramic board (1000mm
2
×
0.8mm)
lunit
Mounted on a ceramic board (1000mm
2
×
0.8mm)
Parameter
Value
-30
±12
-4.3
-25
0.25
0.3
150
-55~150
Units
V
V
A
A
W
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
℃
℃
Rev. A Jan 2012
P03-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
