WGW15G120N
WGW15G120N
Low Loss IGBT
Features
■
15A,1200V,V
CE(sat)
(Typ.=2.4v)@I
C
=15A & Tc=100℃
■
low Gate charge(Typ.= 85nC)
■
NPT Technology, Positive temperature coefficient
■
Low EMI
■
Pb-free lead plating; RoHS compliant
Applications
■
General purpose inverter
■
Frequency converters
■
Induction Heating(IH)
■
Uninterrupted Power Supply(UPS)
G
C
E
TO3P(N)
TO3P(N)
Absolute Maximum Ratings
(Tc=25
℃)
Symbol
V
CES
I
C
I
CP
V
GES
t
SC
Collector-Emitter Voltage
DC Collector Current
Collector pulse Current
Gate-Emitter Voltage
Short circuit withstand time
Turn-off safe area
P
D
T
J
T
STG
T
L
Total Dissipation
Operation Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes
V
GE
=10V,V
CE
≤1200V,T
J
≤150℃
V
CE
≤1200V,T
J
≤150℃
Tc=25℃
Tc=100℃
T
p
limited by T
J
Parameter
Value
1200
30
15
45
±20
10
45
150
-40 ~ 150
-50 ~ 150
300
Unit
V
A
A
A
V
μs
A
W
℃
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
0.6
40
Unit
℃/W
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
