WS21351
ABSOLUTE MAXIMUM RATINGS
Symbol
VB
VOUT
VIN
ICL
dV
OUT
/dt
TA
TSTG
TL
Parameter
High-side floating supply
Half bridge output
RMIN, CPH pins input voltage
Clamping current level
Allowable offset voltage slew rate
Operating temperature range
Storage temperature range
Lead temperature (soldering,10 seconds)
Min.
-0.3
-0.3
-0.3
-25
-50
-25
-65
Typ.
Max.
600
575
7
25
50
125
150
300
Unit
V
mA
V/ns
°C
Note: more than the limit specified in the table parameters will result in permanent damage to the device. The device is not recommended in
these extreme conditions of work, working conditions in the limit above which may affect device reliability.
Electrical Characteristics
(
V
BIAS
(V
DD
, V
B
-Vout)=14.0V, T
A
=25°C, unless otherwise specified.
)
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Supply characteristics
VDDTH(ST+)
VDDTH(ST-)
VDDHY(ST)
VCL
IST
IDD
VDD UVLO positive going threshold
VDD UVLO negative going threshold
VDD-side UVLO hysteresis
Supply clamping voltage
Start-up supply current
Dynamic operating supply current
IDD =20mA
VDD = 10V
Running freq=85KHZ
14．4
VDD rising from 0V
VDD decreasing
11.2
9
12.8
10
2．8
15．6
50
4．5
80
μA
mA
14
11
V
Floating supply characteristics (
VB-VOUT
)
VHSTH(ST+)
VHSTH(ST-)
VHSHY(ST)
IHST
High-side UVLO positive going threshold
High-side UVLO negative going threshold
High-side UVLO hysteresis
High-side quiescent supply current
VB –VOUT = 14V
VB –VOUT increasing
VB –VOUT decreasing
7．5
7．8
9
8
1
60
uA
10．5
9．2
V
Oscillator characteristics
fPRE
fOSC
Duty
DT
VCPH
Preheating frequency
Running frequency
Oscillator duty cycle
Output dead time
Maximum CPH voltage
RMIN = 82kΩ, VCPH =0V
RMIN = 82kΩ, VCPH =6V
66
29
86
34
50
2．0
6
96
39
kHz
kHz
%
Us
V
MOSFET characteristics
ILKMOS
RON
MOSFET leakage current
On resistance (dynamic)
VGS = 12V, ID = 500mA
10
VDS = 500V
VGS = 12V, ID = 100mA
8
Ω
10
μA
3/7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
