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WSP10D100H 参数 Datasheet PDF下载

WSP10D100H图片预览
型号: WSP10D100H
PDF下载: 下载PDF文件 查看货源
内容描述: 功率肖特基整流器 [Power Schottky Rectifier]
分类和应用:
文件页数/大小: 4 页 / 329 K
品牌: WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
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WSP10D100H
WSP10D100H
Power Schottky Rectifier
Sch ott
ect
Features
■ 10A(2×5A),100V
■ V
F
(max)=0.60V(@TJ=125℃)
■ Low power loss, high efficiency
■ Common cathode structure
■ Guard ring for over voltage protection, High reliability
■ Maximum Junction Temperature Range(175℃)
K
General Description
Dual center tap Schottky rectifiers suited for High frequency switch
power supply and Free wheeling diodes, polarity protection
applications.
A1
K
A2
TO220
Absolute Maximum Ratings
Symbol
V
DRM
V
DC
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
dv/dt
T
J,
T
stg
Parameter
Repetitive peak reverse voltage
Maximum DC blocking voltage
RMS forward current
per diode
Average forward current
per device
Surge non repetitive forward current
Repetitive peak reverse current
Critical rate of rise of reverse voltage
Junction Temperature
Storage Temperature
Value
100
100
10
8
Units
V
V
A
A
10
180
1
10000
175
-40~150
A
A
V/ns
Thermal Characteristics
Symbol
R
QJC
R
QCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Value
Min
-
0.3
Typ
-
-
Max
1.9
-
Units
℃/W
℃/W
Rev. B Jun.2011
T02-2