WSP30D100
Silicon Controlled Rectifiers
Features
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30A(2×15A),100V
V
F(max)
=0.72V(@T
J
=125℃)
Low power loss,high efficiency
Common cathode structure
Guard ring for over voltage protection, High reliability
Maximum Junction Temperature Range(175℃)
General Description
Dual center tap Schottky rectifiers suited for High frequency
switch power supply and Free wheeling diodes, polarity protection
applications.
Absolute Maximum Ratings
Symbol
V
DRM
V
DC
Parameter
Repetitive Peak reverse Voltage
Maximum DC blocking Voltage
Per diode
Value
100
100
15
Units
V
V
I
F(AV)
Average forward current
Per device
30
275
175
-40~150
A
I
FSM
T
J
T
STG
Surge non repetitive for ward current
Junction Temperature
Storage Temperature
A
°C
°C
Thermal Characteristics
Symbol
R
QJC
Parameter
Thermal Resistance Junction to Case
Value
Min
-
Typ
-
Max
1.8
Units
℃/W
Ordering Information
Order codes
WSP30D100
WSP30D100-HW
Package
TO220C
TO220HW
Marking
P30D100
P30D100
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev.A Nov.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
