WTF12A60
WTF12
F12A60
Bi-Directional Triode Thyristor
Features
�½
�½
�½
�½
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Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(I
T(RMS)
=12A)
Isolation voltage(V
ISO
=1500V AC)
High Commutation dv/dt
Halogen free(WTF12A60-HF)
General Description
General purpose switching and phase control applications .These devices
are intented to be interfaced directly to mirocontrollers,logic integrated
circuits and other low power gate trigger circuits such as fan speed and
temperature modulation control,lighting control and static switching relay.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Absolute Maximum Ratings
(T
J
=25℃
symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
stg
unless otherwise specified)
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, T
J
=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
Circuit Fusing Considerations (tp=10ms)
Peak Gate Power —Forward,(T
C
=58℃,Pulse With≤1.0us)
Average Gate Power —Forward,(Over any 20ms period)
Peak Gate Current—Forward,T
J
=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
Junction Temperature
Storage Temperature
Ratings
600
12
119/130
71
5
0.5
2
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
R
ӨJC
R
ӨJA
Parameter
Thermal Resistance Junction to case
Thermal resistance Junction to Ambient
Value
3.3
120
Units
℃/W
℃/W
Rev.A May.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
