WTPA16A60CW 参数 Datasheet PDF下载

WTPA16A60CW

Bi-Directional Triode Thyristor

Features

■ Repetitive Peak off-State Voltage: 600V

■ R.M.S On-State Current(I

T(RMS)

=16A

■ Low on-state voltage: V

TM

=1.55V(Max.)@ I

T

=22.5A

■ High Commutation dV/dt.

General Description

General purpose swithhing and phase control applications. These

devices are intended to be interfaced directly to micro-controllers,

logic integrated circuits and other low power gate trigger circuits

such as fan speed and temperature modulation control, lighting

control and static switching relay.

The -W series are specially recommended for use on inductive loads,

thanks to their high commutation performances. By using an internal

ceramic pad, the WTPA series provides voltage insulated tab (rated

at 2500V RMS). complying with UL standards (file ref.:E347423)

Tab

TO220ISO

Absolute Maximum Ratings

Symbol

V

DRM

/V

PRM

I

T(RMS)

I

TSM

I

2

t

P

GM

P

G(AV)

dI/dt

I

FGM

V

RGM

T

J,

T

stg

(TJ=25℃ unless otherwise specified)

Parameter

Peak Repetitive Forward Blocking Voltage(gate open)

Forward Current RMS (All Conduction Angles, TJ=58℃)

Peak Forward Surge Current,

(full Cycle, Sine Wave, 50/60 Hz)

(Note 1)

Value

600

16

160/168

144

5

1

50

4

10

-40~125

-40~150

Units

V

A

A

A

2

s

W

W

A/μs

A

V

℃

℃

Circuit Fusing Considerations (tp= 10 ms)

Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)

Average Gate Power — Forward, (Over any 20ms period)

Critical rate of rise of on-state current

T

J

=125℃

I

TM

= 20A; I

G

= 200mA; dI

G

/dt = 200mA/µs

Peak Gate Current — Forward, T

J

= 125°C (20 µs, 120 PPS)

Peak Gate Voltage — Reverse, T

J

= 125°C (20 µs, 120 PPS)

Junction Temperature

Storage Temperature

Note1:

.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may

swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.

Thermal Characteristics

Symbol

R

QJC

R

QJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Min

-

-

Value

Typ

-

-

Max

1.6

60

Units

℃/W

℃/W

Rev. A Sep.2010

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T03-3