WTPB16A60SW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(I
T(RMS)
=16A
■ Low on-state voltage: V
TM
=1.55V(Max.)@ I
T
=22.5A
■ High Commutation dV/dt.
General Description
General purpose swiTJhing and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified)
Symbol
V
DRM
/V
PRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
dI/dt
I
FGM
V
RGM
T
J,
T
stg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, TJ=58℃)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
T
J
=125℃
I
TM
= 20A; I
G
= 200mA; dI
G
/dt = 200mA/µs
Peak Gate Current — Forward, T
J
= 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, T
J
= 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
(Note 1)
Value
600
16
160/168
144
5
1
50
4
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A/μs
A
V
℃
℃
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
1.6
60
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
T01-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
