WTPB4A60SW
WTPB4 60SW
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ I
TM
)
High Commutation dv/dt
High Junction temperature(T
J
=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings
(T
=
J
25°C unless otherwise specified)
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
TSM
2
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
T
J
= 110 °C
Condition
Ratings Units
600
4.0
50Hz
60Hz
30
A
31
5.1
5
A2 s
W
W
A
V
℃
℃
V
A
One cycle, Peak value, non-
repetitiv
e full cycle
It
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T
J
= 125 °C
T
J
= 125 °C
1
4.0
7.0
-40~+150
-40~+150
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
Value
2.6
60
Units
℃/W
℃/W
Jan 2009. Rev. 0
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T02-1
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