WTPB8A60CW
Bi-Directional Triode Thyristor
irecti
Trio
rist
sto
Features
eat
■
Repetitive Peak off-State Voltage:600V
■R.M.S
On-State Current(I
T(RMS)
=8A
■
Low on-state voltage: V
TM
=1.55V(Max.)@ I
T
=11A
■
High Commutation dV/dt.
General Description
escri tio
rip
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified)
imu
ing
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Parameter
amet
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current,
(1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
(Note 1)
Value
600
8
80/84
36
5
1
2
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A
V
℃
℃
Note1:
.Although not recommended, off-state v
oltages up to 800V may be applied without damage, but the TRIAC
Note1
e1:
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
rmal Cha act ris
Symbol
R
QJC
R
QJA
Parameter
amet
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min
-
-
Typ
Typ
-
-
Max
Max
1.6
60
Units
℃/W
℃/W
Rev. B
Nov.2008