WFF4N65
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
Δ
BV
DSS
/
Δ
T
J
I
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
Drain-Source Leakage Current
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
V
GS
= 0V, I
D
= 250uA
I
D
= 250uA, referenced to 25 °C
V
DS
= 650V, V
GS
= 0V
V
DS
= 520V, T
C
= 125 °C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10 V, I
D
= 2.0A
650
-
-
-
-
-
710
0.6
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
( T
C
= 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
I
GSS
On Characteristics
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-state Resis-
tance
2.0
-
-
2.3
4.0
2.7
V
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
-
-
545
60
8
-
-
-
pF
Dynamic Characteristics
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
V
DS
=520V, V
GS
=10V, I
D
=4.0A
(Note 4, 5)
-
V
DD
=325V, I
D
=4.0A, R
G
=25Ω
(Note 4, 5)
10
35
45
40
15
2.8
6.2
-
-
-
-
-
-
-
nC
ns
-
-
-
-
-
-
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 27.5mH, I
AS
=4.0A, V
DD
= 50V, R
G
= 25Ω , Starting T
J
=
25°C
3. I
SD
≤
4.0A, di/dt
≤
200A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
I
S
=4.0A, V
GS
=0V
I
S
=4.0A, V
GS
=0V, dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
300
2.2
Max.
4.0
16
1.4
-
-
Unit.
A
V
ns
uC
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