Typical Characteristics
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
2
10
1
175
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 25V
2. 250µs Pulse Test
※
Notes :
1. 250µs Pulse Test
2. T
C
= 25
℃
10
-1
10
0
10
0
10
1
10
0
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
Drain-Source On-Resistance
V
GS
= 10V
20
V
GS
= 20V
15
I
DR
, Reverse Drain Current [A]
25
10
2
R
DS(O N)
[m
Ω
],
10
10
1
5
※
Note : T
J
= 25
℃
175
℃
0
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0
0
50
100
150
200
250
300
10
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
GS
, Gate-Source Voltage [V]
4000
10
V
DS
= 30V
V
DS
= 48V
C
oss
Capacitance [pF]
8
3000
C
iss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
2000
4
1000
C
rss
2
※
Note : I
D
= 70A
0
-1
10
10
0
10
1
0
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
WISDOM [ WISDOM TECHNOLOGIES INT`L ]
